Level of study
BAC +4
ECTS
8 credits
Component
Faculty of Science
Hourly volume
66h
Description
This module is devoted to the basics of physics and technology of semiconductor based components. The major part of the UE is devoted to the physics of the component. Based on the equations that describe the properties of materials, the main cases of junctions are examined (p/n, metal/SC, MIS). Based on this knowledge, the operation of elementary components (diodes, transistors) is explained. In the second part, the first bricks of the process technology of components manufacturing are presented.
Objectives
- Mobilize fundamental concepts to model and analyze the operation of semiconductor-based electronic components.
- Propose a protocol and carry out experimental measurements to characterize a component, interpret them and deduce the relevant parameters.
- Propose a protocol to realize a simple device of photodiode type.
Necessary pre-requisites
Recommended Prerequisites:
Condensed matter physics
Knowledge control
CCI
Syllabus
This module is mainly devoted to the physics of semiconductor components. First the equations, which govern the behavior of semiconductor materials, are presented. The case of three types of junctions (p/n, metal semiconductor, metal insulating semiconductor) is then studied in detail at equilibrium and non-equilibrium. From the equations describing the behavior of junctions, those describing the operation of basic components: diodes (p/n, Schottky, MOS), transistors (bipolar, JFET, MESFET, MOSFET), are established. The usual methods of characterization of these components are presented in connection with an experimental part which takes place in the module of Experimental Physics.
In addition, this teaching includes an introduction to the technologies implemented for the elaboration of semiconductor-based devices. After some historical reminders, it includes a quick presentation of the working environment (clean room) and the different technological steps. In view of the first work in clean room (practical work) taking place at the beginning of the second semester (HAP810P), a stronger focus is put on photolithography, etching (humic and dry) and metallization. The other techniques will be studied in depth in the HAP810P and HAP928P courses.
Junction Physics and Application
SC in and out of equilibrium
p-n junction at equilibrium / polarized - Light Emitting Diode, photodiode
Metal-SC contact, Schottky diode
Contact MIS
Bipolar transistors
Single pole transistor - J-FET, MESFET, MOSFET
Presentation of the main characterization techniques
Technological Processes 1/3 :
History and background of the microelectronics industry
Introduction to microelectronics and cleanroom technologies
Optical lithography
Evaporation of metals - bases
Chemical etching