• Level of study

    BAC +5

  • ECTS

    8 credits

  • Component

    Faculty of Science

  • Hourly volume

    63h

Description

Third and last part of the courses dedicated to the elaboration processes of micro, nano- and opto-electronic devices. The last technological building blocks not yet covered in the previous semesters are presented in detail. The modeling and simulation of technological processes is predominant, as an introduction to TCAD solutions. Finally, the synthesis of all these teachings is carried out in a concrete way with the sequence of all these technological steps in order to realize discrete and integrated components, from wafer to packaged devices.

 

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Objectives

- Master the elaboration of materials and components through the implementation of different technological steps, as well as their modeling

- Know how to read a layout (set of masks) and associate the corresponding technological steps.

- Conversely, be able to design layouts (partials) corresponding to the basic functions of integrated circuits or discrete components.

- Be able to actively participate in the manufacturing of micro, nano and opto-electronic devices, from the wafer to the packaging stage (front-end of line + back-end of line).

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Necessary pre-requisites

Mastery of the concepts covered in the UE HAP711P - "Physics and technology of components" and HAP810P - "Physics and technology of optics and microelectronics - clean room

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Knowledge control

Syllabus

Technology 3/3 & process simulation: this UE is the third and last one dealing with the elaboration processes of micro, nano and opto-electronic devices.

First, the epitaxial growth techniques more specifically used in the design of alternative devices to the silicon die are addressed (MBE, OMCVD, ALD), in addition to the CVD techniques treated in the previous semester. The same applies to localized doping techniques (diffusion and ion implantation). In general, the emphasis is placed on the modeling and simulation of technological processes, as an introduction to TCAD(Technology Computer-Aided Design) solutions.

In a second step, the correlated implementation of all the elaboration processes is treated through concrete examples: discrete and integrated components - bipolar transistors, MOSFETs. The students are made aware of the specific problems of (or related to) the design of analog and logic integrated circuits: pooling of technological steps, isolation... After a presentation of the historical NMOS integrated technology, the design of CMOS type logic circuits is covered: inverter and other elementary logic gates (NAND, NOR...). Finally, the students are confronted with the reading of some typical layouts (set of masks): identification of the functions and associated technological steps.

 

In summary:

  • Epitaxial layer growth techniques - continued: OMCVD, ALD, MBE
  • Diffusion in solids (doping, interdiffusion in heterostructures)
  • Ion implantation
  • Application to the simulation of established models for technological processes - Introduction to TCAD
  • Layout / Integration / Implementation of basic logic functions
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