Component technology and industrial process simulation

Third and final part of the course devoted to micro, nano, and optoelectronic device fabrication processes. The latest technological building blocks not yet covered in previous semesters are presented in detail. The modeling and simulation aspects of technological processes are emphasized, as an introduction to TCAD solutions. Finally, all of these lessons are synthesized in a practical manner, with a sequence of all of these technological steps in order to produce discrete and integrated components, from wafers to packaged devices.

- Mastering the development of materials and components through the implementation of various technological stages, as well as their modeling

- Know how to read a layout (set of masks) and associate it with the corresponding technological steps.

- Conversely, being able to design (partial) layouts corresponding to the basic functions of integrated circuits or discrete components.

- Be able to actively participate in the manufacture of micro, nano, and optoelectronic devices, from the wafer stage to the packaging stage (front-end of line + back-end of line).

Mastery of the concepts covered in the courses HAP711P – "Physics and Technology of Components" and HAP810P – "Physics and Technology of Optoelectronics and Microelectronics – Clean Room."

CCI

Technology 3/3 & process simulation: this course unit is the third and final one dealing with the processes involved in developing micro, nano, and optoelectronic devices.

First, epitaxial growth techniques more specifically used in the design of alternative devices to silicon (MBE, OMCVD, ALD) are covered, in addition to CVD, which was covered in the previous semester. The same applies to localized doping techniques (diffusion and ion implantation). In general, the emphasis is on the modeling and simulation of technological processes, as an introduction to TCAD (Technology Computer-Aided Design) solutions.

In a second stage, the correlated implementation of all the manufacturing processes is addressed through concrete examples: discrete and integrated components such as bipolar transistors and MOSFETs. Students are made aware of the specific issues involved in (or related to) the design of analog and logic integrated circuits: pooling of technological stages, isolation, etc. After a presentation of historical NMOS integrated technology, the design of CMOS-type logic circuits is discussed: inverters and other basic logic gates (NAND, NOR, etc.). Finally, students are asked to read a few typical layouts (mask sets): identification of functions and associated technological stages.

In summary:

• Epitaxial layer growth techniques – continued: OMCVD, ALD, MBE
• Diffusion in solids (doping, interdiffusion in heterostructures)
• Ion implantation
• Application to the simulation of models established for technological processes - Introduction to TCAD
• Layout / Integration / Implementation of basic logic functions