Component technology and industrial process simulation

The third and final part of the course is devoted to processes for the production of micro-, nano- and opto-electronic devices. The latest technological building blocks not covered in previous semesters are presented in detail. The modeling and simulation of technological processes is a key aspect, as an introduction to TCAD solutions. Finally, all these lessons are synthesized in a concrete way, with the sequence of all these technological stages leading to the production of discrete and integrated components, from wafer to packaged device.

- Master the development of materials and components through the implementation of different technological stages, as well as their modeling.

- Know how to read a layout (set of masks) and associate it with the corresponding technological stages.

- Conversely, be able to design (partial) layouts corresponding to the basic functions of integrated circuits or discrete components.

- Be actively involved in the manufacture of micro, nano- and opto-electronic devices, from wafer to packaging (front-end of line + back-end of line).

Mastery of the concepts covered in UE HAP711P - "Physics and technology of components" and HAP810P - "Physics and technology of opto- and micro-electronics - clean room".

CCI

Technology 3/3 & process simulation: this is the third and final UE covering processes for the production of micro, nano- and opto-electronic devices.

Initially, epitaxial growth techniques more specifically employed in the design of alternative devices to the silicon die are covered (MBE, OMCVD, ALD), in addition to the CVD techniques covered in the previous semester. The same applies to localized doping techniques (diffusion and ion implantation). In general, emphasis is placed on the modeling and simulation of technological processes, as an introduction to TCAD(Technology Computer-Aided Design) solutions.

Secondly, the correlated implementation of all the manufacturing processes is covered through concrete examples: discrete and integrated components such as bipolar transistors and MOSFETs. Students are made aware of the problems specific to (or related to) the design of analog and logic integrated circuits: pooling of technological stages, isolation, etc. After a presentation of the historic NMOS integrated technology, the design of CMOS-type logic circuits is covered: inverter and other elementary logic gates (NAND, NOR, etc.). Finally, students are introduced to some typical layouts: identifying functions and associated technological steps.

In summary :

• Epitaxial layer growth techniques - continued: OMCVD, ALD, MBE
• Diffusion in solids (doping, interdiffusion in heterostructures)
• Ion implantation
• Application to the simulation of models established for technological processes - Introduction to TCAD
• Layout / Integration / Implementation of basic logic functions