Level of Education
5 years of post-secondary education
ECTS
8 credits
Training Structure
College of Sciences
Number of hours
63h
Description
This is the third and final part of the course series on the fabrication processes for micro-, nano-, and optoelectronic devices. The remaining technological building blocks not yet covered in previous semesters are presented in detail. The modeling and simulation aspects of these technological processes play a central role, serving as an introduction to TCAD solutions. Finally, a practical synthesis of all these topics is provided by demonstrating the sequence of all these technological steps required to produce discrete and integrated components, from the wafer to the packaged devices.
Objectives
- Master the development of materials and components through the implementation of various technological processes, as well as their modeling
- Know how to read a layout (set of masks) and match it with the corresponding manufacturing steps.
- Conversely, be able to design (partial) layouts that correspond to the basic functions of integrated circuits or discrete components.
- Be able to actively participate in the fabrication of micro-, nano-, and optoelectronic devices, from the wafer stage through to the packaging stage (front-end of line and back-end of line).
Mandatory Prerequisites
Mastery of the concepts covered in the courses HAP711P – “Physics and Technology of Components” and HAP810P – “Physics and Technology of Optoelectronics and Microelectronics – Cleanroom”
Knowledge Assessment
CCI
Course Outline
Technology 3/3 & Process Simulation: This course unit is the third and final one covering the fabrication processes for micro-, nano-, and optoelectronic devices.
First, the course covers epitaxial growth techniques—specifically those used in the design of devices that serve as alternatives to silicon-based technology (MBE, OMCVD, ALD)—as a complement to CVD, which was covered in the previous semester. The same applies to localized doping techniques (diffusion and ion implantation). In general, the course emphasizes the modeling and simulation of technological processes, serving as an introduction to TCAD (Technology Computer-Aided Design) solutions.
Next, the coordinated implementation of all design processes is addressed through concrete examples: discrete and integrated components such as bipolar transistors and MOSFETs. Students are introduced to the specific challenges of (or related to) the design of analog and logic integrated circuits: sharing of technological steps, isolation, etc. Following a presentation on the historical NMOS integrated technology, the design of CMOS-type logic circuits is covered: inverters and other basic logic gates (NAND, NOR, etc.). Finally, students are given the opportunity to analyze several typical layout examples (mask sets), focusing on identifying functions and the associated technological steps.
In summary:
- Techniques for Growing Epitaxial Layers – Continued: OMCVD, ALD, MBE
- Diffusion in solids (doping, interdiffusion in heterostructures)
- Ion implantation
- Application of Models Developed for Technological Processes to Simulation—An Introduction to TCAD
- Layout / Integration / Implementation of Basic Logical Functions