Study level
BAC +4
ECTS
8 credits
Component
Faculty of Science
Hourly volume
66h
Description
This module is devoted to the basics of semiconductor component physics and technology. Most of the EU is devoted to component physics. Based on the equations that describe material properties, the main cases of junctions are examined (p/n, metal/SC, MIS). Based on this knowledge, the operation of elementary components (diodes, transistors) is explained. In the second part, the first building blocks of component manufacturing process technology are presented.
Objectives
- Mobilize fundamental concepts to model and analyze the operation of semiconductor-based electronic components.
- Propose a protocol and then carry out experimental measurements to characterize a component, interpret them and deduce the relevant parameters.
- Propose a protocol for producing a simple photodiode-type device.
Necessary prerequisites
Recommended prerequisites:
Condensed matter physics
Knowledge control
CCI
Syllabus
This module focuses on the physics of semiconductor components. First, the equations governing the behavior of semiconductor materials are presented. The case of three types of junctions (p/n, metal semiconductor, metal insulator semiconductor) is then studied in detail at equilibrium and non-equilibrium. From the equations describing the behavior of junctions, those describing the operation of basic components: diodes (p/n, Schottky, MOS), transistors (bipolar, JFET, MESFET, MOSFET), are established. The usual methods for characterizing these components are presented, in conjunction with an experimental section in the Experimental Physics module.
The course also includes an introduction to the technologies used to produce semiconductor-based devices. After a few historical reminders, it includes a brief presentation of the working environment (cleanroom) and the different technological stages. With a view to the first cleanroom project (practical work) taking place at the beginning of the second semester (HAP810P), a stronger focus is placed on photolithography, etching (humic and dry) and metallization. Other techniques will be covered in greater depth in UE HAP810P and HAP928P.
Junction physics and application
SC balanced and unbalanced
Equilibrium / polarized p-n junction - Light-emitting diode, photodiode
Metal-SC contact, Schottky diode
Contact MIS
Bipolar transistors
Unipolar transistor - J-FET, MESFET, MOSFET
Overview of the main characterization techniques
Technological Processes 1/3 :
History and background of the microelectronics industry
Introduction to microelectronics and cleanroom technologies
Optical lithography
Evaporation of metals - bases
Chemical etching