ECTS
4 credits
Component
Faculty of Science
Description
The course presents in a progressive way the main physical phenomena allowing to understand the functioning of electronic components and their use in electronic circuits. The first part introduces the physics of semiconductor materials and then, in the second part, deals with the characteristics of materials at equilibrium. The third part presents the main electronic transport phenomena. Finally, the fourth and fifth parts present the most important electronic components: diodes and transistors.
Objectives
The objective of the course is to provide students with the basics for understanding the main characteristics and limitations of electronic components.
By combining different concepts from solid state physics, quantum physics and semiconductor physics, students will gain the essential knowledge to understand the operation of current and future electronic components.
Necessary pre-requisites
Basics of classical physics
Recommended prerequisites*:
Basics of quantum physics
Knowledge control
final exam + session 2
Syllabus
- Semiconductor materials
- Crystalline structures of solids
- Types of semiconductors
- Crystalline networks
- Atomic bonding
- Imperfections and impurities
- Energy bands
- Formation of energy bands
- Kronig-Penney model
- Relation energy-wave vector
- Electrical conduction
- Energy bands and current
- Drift current
- Effective mass
- Hole concept
- Metals, insulators and semiconductors
- Density of states
- Mathematical derivation
- Extension to the case of semiconductors
- Elements of statistical mechanics
- Statistical laws
- Fermi-Dirac function
- Fermi energy
- Semiconductor at equilibrium
- Load carriers
- Equilibrium distributions of electrons and holes
- Intrinsic concentration
- Position of the intrinsic Fermi level
- Dopants and energy levels
- Extrinsic semiconductor
- Equilibrium distribution of electrons and holes
- Degenerate and non-degenerate semiconductors
- Donor and Acceptor Statistics
- Load neutrality
- Extrinsic Fermi level
- Electronic transport
- Carrier drift
- Drift current density
- Mobility
- Conductivity
- Saturation speed
- Carrier distribution
- Diffusion current density
- Total current density
- Gradual distribution of impurities
- Induced electric field
- Einstein's relationship
- Hall effect
- Generation-Recombination
- Carriers in excess
- Continuity equation
- Diffusion equation
- Diodes
- Diode pn
- Structure of the pn junction
- Equilibrium pn junction
- pn junction in reverse and direct polarization
- Current-voltage characteristic
- Schottky diode
- Metal-semiconductor barrier
- Current-voltage characteristic
- Ohmic metal-semiconductor contact
- Heterojunctions
- Materials for heterojunctions
- Energy band diagram
- Two-dimensional electron gas
- Transistors
- Field effect transistor
- Operating principle
- Capacity-voltage characteristic
- Current-voltage characteristic
- Bipolar transistor
- Operating principle
- Modes of operation
- Current-voltage characteristic
Additional information
CM : 33h